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| DG2034 Vishay Siliconix Single 4:1 Low rON Multiplexers DESCRIPTION The DG2034 is a low voltage, low rON, high bandwidth single 4 to 1 analog multiplexer designed for high performance switching of analog and video signals. Combining low power; fast switching; low on-resistance, flatness and matching; and small physical size, the DG2034 is ideal for portable and battery applications. Built on Vishay Siliconix's low voltage CMOS process, the DG2034 has an epitaxial layer which prevents latchup. Break-before-make is guaranteed. FEATURES * Low voltage operation (1.8 V to 5.5 V) * * * * Low on-resistance - rDS(on): 4 Off-isolation and crosstalk: - 55 dB at 10 MHz Fast switch - 25 ns tON Low charge injection - QINJ: 4.7 pC RoHS COMPLIANT * Low power consumption - 4 W BENEFITS * * * * * High accuracy High bandwidth TTL and low voltage logic compatibility Low power consumption Reduced PCB space APPLICATIONS * * * * * Mixed signal routing Portable and battery operated systems Low voltage data acquisition Modems PCMCIA cards FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION 12-Pin QFN (3 x 3 mm) A0 12 NC 11 Logic S1 1 9 S2 A0 S1 GND 2 8 COM GND S3 EN 4 EN 5 NC Top View 6 V+ 1 2 3 4 5 Top View Logic 10 9 8 7 6 A1 S2 COM S4 V+ A1 10 MSOP-10 S3 3 7 S4 TRUTH TABLE A1 X 0 0 1 1 A0 X 0 1 0 1 EN 0 1 1 1 1 ON Switch None S1 S2 S3 S4 ORDERING INFORMATION Temp Range - 40 C to 85 C Package MSOP-10 12-pin QFN (3 x 3 mm) Part Number DG2034DQ-T1-E3 DG2034DN-T1-E4 Document Number: 72418 S-80164-Rev. D, 28-Jan-08 www.vishay.com 1 DG2034 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Referenced V+ to GND AX, EN, SX, COMa Continuous Current (Any Terminal) Peak Current (Pulsed at 1 ms, 10 % duty cycle) Power Dissipation (Packags)b QFN-12 (3 x 3 mm)c MSOP-10 d Limit - 0.3 to + 6 - 0.3 to (V+ + 0.3) 50 100 1295 320 Unit V mA mW Storage Temperature (D Suffix) - 65 to 150 C Notes: a. Signals on SX, DX, EN or AX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 16.2 mV/C above 70 C. d. Derate 4.0 mV/C above 70 C. SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified V+ = 3 V, 10 %, VAL = 0.4 V, VAH = 1.5 Ve Limits - 40 to 85 C Temp.a Full Room Full V+ = 2.7 V, VCOM = 0.5 V/1.5 V/2.0 V IS = 10 mA Room Room V+ = 3.3 V, VS = 1 V/3 V VCOM = 3 V/1 V, VEN = 0 V V+ = 3.3 V VCOM = VS = 1 V/3 V VA/EN = 0 or V+, See Truth Table Room Full Room Full Room Full Full Full Full Room Full VS = 1.5 V, RL = 300 Room Full Room VS = 1.5 V/0 V, VS = 0 V/1.5 V, RL = 300 CL = 1 nF, Vgen = 0 V, Rgen = 0 RL = 50 , CL = 5 pF RL = 50 , CL = 5 pF f = 1 MHz f = 10 MHz f = 1 MHz f = 10 MHz Room Full Room Room Room Room Room Room V+ = 2.7 V, f = 1 MHz Room Room 2.7 V+ = 3.3 V, VA/EN = 0 or 3.3 V, See Truth Table Full 25 15 10.5 30 - 4.7 - 73 - 54 - 77 - 59 14 46 67 3.3 1.0 V A pF dB 45 55 pC -1 - 10 -1 - 10 -1 - 10 - 1.0 1.5 0.4 35 45 25 35 ns Min.c 0 4 0.1 0.3 0.3 0.3 0.3 Typ.b Max.c V+ 7 9 0.3 1.5 1 10 1 10 1 10 1.0 A V nA Unit V Parameter Analog Switch Analog Signal Ranged On-Resistance rON Match rON Flatnessd,f Off Leakage Currentg COM Off Leakage Currentg Channel-On Leakage Currentg Digital Control Input Currentd Input High Voltage Input Low Voltage d d Symbol VANALOG rON rON rON Flatness IS(off) ICOM(off) ICOM(on) IA or IEN VAH or VENH VAL or VENL tON tOFF tD ttrans QINJ OIRR XTALK CS(off) CCOM(off) CCOM(on) V+ I+ d Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Timed Transition Time Charge Injectiond Off-Isolationd Channel-to-Channel Crosstalkd Off Capacitanced Capacitanced COM Off COM On Capacitance Power Supply Power Supply Range Power Supply Currentd www.vishay.com 2 Document Number: 72418 S-80164-Rev. D, 28-Jan-08 DG2034 Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Test Conditions Otherwise Unless Specified V+ = 3 V, 10 %, VAL = 0.8 V or VAH = 2.4 Ve Limits - 40 to 85 C Temp.a Full Room Full V+ = 4.5 V, VCOM = 1.5 V/2.5 V/3.5 V IS = 10 mA Room Room V+ = 5.5 V, VS = 1 V/4.5 V VCOM = 4.5 V/1 V, VEN = 0 V V+ = 5.5 V, VCOM = VS = 1 V/4.5 V Room Full Room Full Room Full Full Full Full Room Full VS = 3.0 V, RL = 300 Room Full Room VS = 3 V/0 V, VS = 0 V/3 V, RL = 300 RL = 50 , CL = 5 p RL = 50 , CL = 5 pF f = 1 MHz f = 10 MHz f = 1 MHz f = 10 MHz Room Full Room Room Room Room Room Room V+ = 5 V, f = 1 MHz Room Room 4.5 V+ = 5.5 V, VA/EN = 0 or 5.5 V, See Truth Table Full 18 12 10.5 25 - 73 - 53.5 - 77 - 60.2 - 4.4 13 43 64 5.5 1.0 V A pF pC dB 40 50 -1 - 10 -1 - 10 -1 - 10 - 1.0 2.4 0.8 30 40 20 30 ns Min.c 0 3 0.16 0.6 0.5 0.5 0.5 Typ.b Max.c V+ 5.5 7 0.5 1.5 1 10 1 10 1 10 1.0 A V nA Unit V Parameter Analog Switch Analog Signal Ranged On-Resistance rON Match rON Flatness d,f Symbol VANALOG rON rON rON Flatness IS(off) ICOM(off) ICOM(on) Off Leakage Current COM Off Leakage Current Channel-On Leakage Current Digital Control Input Currentd Input High Voltage d IAH or IENH VAH or VENH VAL or VENL VA or VEN = 0 or V+, See Truth Table Input Low Voltaged Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Timed Transition Time Off-Isolationd Channel-to-Channel Crosstalkd Charge Injection Off Capacitance COM Off d tON tOFF tD ttrans OIRR XTALK QINJ CS(off) CCOM(off) CCOM(on) V+ I+ d CL = 1 nF, Vgen = 0 V, Rgen = 0 d Capacitanced COM On Capacitance Power Supply Power Supply Range Power Supply Current Notes: a. Room = 25 C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, not subjected to production test. e. VA, EN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 5 V testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 72418 S-80164-Rev. D, 28-Jan-08 www.vishay.com 3 DG2034 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 12 5.0 4.5 10 rON - On-Resistance () rON - On-Resistance () V+ = 2.7 V 4.0 3.5 3.0 A 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 VCOM - Analog Voltage (V) 0.0 0.0 A = 85 C B = 25 C C = - 40 C C B V+ = 4.5 V C B A 8 V+ = 1.8 V V+ = 2.7 V V+ = 3.3 V 6 4 V+ = 5.5 V 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCOM - Analog Voltage (V) rON vs. VCOM and Supply Voltage 10000 V+ = 5.5 V I+ - Supply Current (pA) I+ - Supply Current (A) 10 m 1m 100 10 1 100 n 10 n 100 - 75 1n 10 rON vs. Analog Voltage and Temperature V+ = 5.5 V 1000 - 50 - 25 0 25 50 75 100 125 100 1K 10 K 100 K 1M 10 M Temperature (C) Input Switching Frequency (Hz) Supply Current vs. Temperature 10000 V+ = 5.5 V VCOM = 4.5 V VS = 1.0 V Leakage Current (pA) Leakage Current (pA) 1000 400 200 0 - 200 - 400 - 600 - 800 - 1000 ICOM( on ) ICOM( off ) 1 - 75 - 50 - 25 0 25 50 75 100 125 - 1200 Supply Current vs. Input Switching Frequency V+ = 5.5 V 100 IS( off ) ICOM(on) IS(off) ICOM(off) 10 - 1400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VS - Analog Voltage (V) Temperature (C) Leakage Current vs. Temperature Leakage vs. Analog Voltage www.vishay.com 4 Document Number: 72418 S-80164-Rev. D, 28-Jan-08 DG2034 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 20 Loss t ON , t OFF - Switching Time (ns) 25 tON V+ = 3.3 V tON V+ = 5.5 V 15 tOFF V+ = 3.3 V tOFF V+ = 5.5 V 5 Loss, OIRR, X TALK (dB) 0 - 20 - 40 OIRR - 60 XTALK - 80 - 100 - 120 0 20 40 60 80 100 120 140 10 k 100 k 1M 10 M 100 M 1G Frequency (Hz) V+ = 3.3 V RL = 50 20 10 0 - 80 - 60 - 40 - 20 Temperature (C) Switching Time vs. Temperature 2.2 3 2 VT - Switching Threshold (V) 1.8 Q - Charge Injection (pC) 1 0 -1 -2 -3 -4 -5 0.2 1 2 3 4 5 6 -6 0 1 Insertion Loss, Off-Isolation Crosstalk vs. Frequency V+ = 5.5 V 1.4 1.0 V+ = 3.3 V V+ = 1.8 V CL = 1 nF 0.6 2 3 4 5 6 V+ - Supply Voltage (V) VCOM - Analog Voltage (V) Switching Threshold vs. Supply Voltage 35 RL = 300 30 tTRANS- , V+ = 3.0 V 25 Charge Injection vs. Analog Voltage tTRANS+, V+ = 3.3 V 20 tTRANS- , V+ = 5.5 V 15 tTRANS+, V+ = 5.5 V 10 - 80 - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (C) Transistion Time vs. Temperature Document Number: 72418 S-80164-Rev. D, 28-Jan-08 www.vishay.com 5 DG2034 Vishay Siliconix TEST CIRCUITS V+ Logic Input Switch Output VOUT RL 300 CL 35 pF VINH VINL 50 % tr < 5 ns tf < 5 ns tOFF Switch Input VIN V+ NO or NC IN GND COM VOUT 90 % 0.9 x VOUT Switch Output 0V tON CL (includes fixture and stray capacitance) VOUT = VIN RL RL + rON Note: Logic input waveform is inverted for switches that have the opposite logic sense control Figure 1. Switching Time V+ Logic Input VO RL 300 CL 35 pF VINH VINL tr < 5 ns tf < 5 ns V+ VNO VNC NO NC IN GND COM VNC = VNO VO Switch Output 0V 90 % tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make +15 V V+ NO or NC VS1 VS2 NC or NO RL 300 CL 35 pF VS1 V01 Switch Output CL (includes fixture and stray capacitance) VO = VS RL RL + rON VS2 V02 10 % 90 % COM VO Logic VINH Input VINL 50 % tr < 5 ns tf < 5 ns tTRANS+ tTRANS- IN GND Figure 3. Transition Time www.vishay.com 6 Document Number: 72418 S-80164-Rev. D, 28-Jan-08 DG2034 Vishay Siliconix TEST CIRCUITS V+ VO Rg V+ COM IN GND NO or NC CL 1 nF VO IN OFF ON OFF VO Vg Q = VO x CL IN dependent on switch configuration Input polarity determined by sense of switch. VIN = 0 - V+ Figure 4. Charge Injection V+ C V+ VS Rg = 50 IN 0 V or 2.4 V NC or NO VOUT VIN NO or NC COM 50 GND VOUT VIN XTALK Isolation = 20 log C = RF bypass Figure 5. Crosstalk V+ V+ C C V+ COM NO or NC Rg = 50 IN 0 V, 2.4 V GND GND Off Isolation = 20 log C = RF Bypass VCOM VNO/NC COM Meter RL 50 0 V, 2.4 V NO or NC IN HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 6. Off Isolation Figure 7. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72418. Document Number: 72418 S-80164-Rev. D, 28-Jan-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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